 [ Full Text (PDF) ] [ DOI link ] |
Abstract: Photoconductive detectors are convenient devices for detecting pulsed terahertz radiation. We have optimized Fe+ ion-damaged InP materials for photoconductive detector signal to noise performance using dual-energy doses in the range from 2.5 X 10(12) to 1.0 X 10(16) cm(-2). Ion implantation allowed the production of semiconducting materials with free-carrier lifetimes between 0.5 and 2.1 ps, which were measured by optical pump terahertz probe spectroscopy. The time resolved photoconductivity of the detector substrates was acquired as a function of time after excitation by 2 nJ pulses from a laser oscillator. These data, when combined with a deconvolution algorithm, provide an excellent spectral response correction to the raw photocurrent signal recorded by the photoconductive detectors. (c) 2008 American Institute of Physics |
Laboratorio de óptica ultrarrápida is part of
Centro de Investigaciones en Óptica A.C.
Loma del bosque 115, Lomas del Campestre, 37150, León, GTO. México.
Tel: +52 (477) 441-42-00, Fax: +52 (477) 441-42-09
For questions please contact the webmaster.
Last modified: 17-Nov-2011
La información contenida en este sitio es responsabilidad única de su autor o
quien la publica y se deslinda al CIO de toda responsabilidad al respecto.